Self-aligned bipolar npn transistor with 60 nm epitaxial base

Author

Burghartz, J.N. ; Mader, S.R. ; Meyerson, B.S. ; Ginsberg, B.J. ; Stork, J.M. ; Stanis, C. ; Sun, J.Y.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

229

Lastpage

232

Abstract

A self-aligned double-poly bipolar transistor with a low-temperature epitaxial base is presented. Selective epitaxy emitter window technology (SEEW) is used to demonstrate the leverage of an epitaxial base technology by achieving 60-nm basewidth, an 7.5-k Omega /sq. intrinsic base sheet resistance, a peak current gain up to 115, and a C-B breakdown voltage of 7.5 V. Despite the low intrinsic base sheet resistance, a peak transit frequency of 30 GHz has been calculated for the transistor. Further, the advantages of SEEW technology for submicron emitters and very thin base formation are explained.<>

Keywords

bipolar transistors; semiconductor epitaxial layers; semiconductor technology; 30 GHz; 60 nm; 7.5 V; SEEW; SEEW technology; breakdown voltage; intrinsic base sheet resistance; low-temperature epitaxial base; npn transistor; peak current gain; selective epitaxial emitter window technology; self-aligned double-poly bipolar transistor; submicron emitters; transit frequency; very thin base formation; Boron; Doping; Epitaxial growth; Isolation technology; Lifting equipment; Lithography; Optical films; Oxidation; Tellurium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74267

Filename

74267