An investigation of ESD protection diode options in SOI

Author

Putnam, C. ; Woo, M. ; Gauthier, R. ; Muhammad, M. ; Chatty, K. ; Seguin, C. ; Halbach, R.

Author_Institution

Semicond. Res. & Dev. Center, IBM Microelectron., Essex Junction, VT, USA

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

24

Lastpage

26

Abstract

In this article, three SOI ESD diodes were investigated. The standard PB ESD diode with floating polysilicon was found to perform equivalently to the cathode connected version and has similar capacitance. However, the floating version is the preferred solution since the concern of oxide breakdown during an ESD discharge is reduced. The alternative diode formed with the silicide blocking masks warrants further investigation since it has advantages of 20% lower capacitance and the elimination of oxide breakdown issues.

Keywords

capacitance; electrostatic discharge; elemental semiconductors; semiconductor device breakdown; semiconductor device models; semiconductor diodes; silicon; silicon-on-insulator; ESD discharge; ESD protection diode; SOI ESD diodes; Si; capacitance; cathode connected diode; floating polysilicon; oxide breakdown; polysilicon bounded diodes; silicide blocking masks; Automatic testing; Biological system modeling; CMOS technology; Capacitance; Cathodes; Circuits; Electrostatic discharge; Microelectronics; Protection; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391539

Filename

1391539