DocumentCode :
2516434
Title :
Effects of different orientation on CdZnTe detectors
Author :
Zhang, Lan ; Li, Yuanjing ; Zhu, Weibin ; Deng, Zhi ; Mao, Shaoji ; Zheng, Xiaocui ; Luo, Cong ; Li, Longxia
Author_Institution :
Nuctech Co. Ltd., Beijing
Volume :
6
fYear :
2006
fDate :
Oct. 29 2006-Nov. 1 2006
Firstpage :
3736
Lastpage :
3738
Abstract :
The traditional orientation used for CdZnTe detectors is (111) surface. To improve the single crystal yield and effectively utilize one oven crystal ingot, we tested CdZnTe detector speciality whose (115) orientation was taken as contact surfaces. Through the same processing as that of (111) orientation we made three pixel CdZnTe detectors. Their performance were tested and compared with that of (111) orientation CdZnTe detectors. The preliminary results were provided here.
Keywords :
II-VI semiconductors; cadmium compounds; crystal orientation; semiconductor counters; CdZnTe; contact surfaces; crystal orientation; pixel CdZnTe detector; single crystal yield; Annealing; Crystals; Detectors; Etching; Leakage current; Nuclear and plasma sciences; Ovens; Telephony; Tellurium; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
ISSN :
1095-7863
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2006.353806
Filename :
4179848
Link To Document :
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