Title :
Fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back technique
Author :
Åberg, I. ; Olubuyide, O.O. ; Li, J. ; Hull, R. ; Hoyt, J.L.
Author_Institution :
MIT Microsyst. Technol. Lab., Cambridge, MA, USA
Abstract :
This paper discusses the fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back technique with total thickness of 25 nm. We have shown that the etch back process does not roughen the surface. By secondary ion mass spectroscopy (SIMS), we have shown a reduction in peak Ge fraction from the as grown 55% to 50% as a result of thermal processing.
Keywords :
Ge-Si alloys; MOSFET; chemical vapour deposition; elemental semiconductors; etching; secondary ion mass spectra; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; silicon; silicon-on-insulator; 25 nm; SIMS; Si-SiGe-Si; SiGe etching; etch-back process; secondary ion mass spectroscopy; silicon on insulator; strained Si-SiGe-Si heterostructure fabrication; thermal processing; Bonding; Charge carrier processes; Electron mobility; Etching; Fabrication; Germanium silicon alloys; Insulation; MOSFETs; Materials science and technology; Silicon germanium;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391544
