• DocumentCode
    2516494
  • Title

    Influence of the mechanical strain induced by a metal gate on electron and hole transport in single and double-gate SOI MOSFETs

  • Author

    Guillaume, T. ; Mouis, M. ; Maîtrejean, S. ; Poncet, A. ; Vinet, M. ; Deleonibus, S.

  • Author_Institution
    IMPE, CNRS, Grenoble, France
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    42
  • Lastpage
    43
  • Abstract
    We study the impact of the mechanical strain induced by a TiN metal gate on carrier transport in thin body SOI MOSFETs. The strain induced mobility variation has been calculated as a function of channel orientation and gate length, considering both n-MOS and p-MOS transistors with single or double gate architectures.
  • Keywords
    MOSFET; elemental semiconductors; semiconductor device models; silicon-on-insulator; titanium compounds; Si; TiN; carrier transport; channel orientation; double-gate SOI MOSFET; electron transport; gate length; hole transport; mechanical strain; metal gate; n-MOS transistors; p-MOS transistors; single gate SOI MOSFET; strain induced mobility variation; thin body SOI MOSFET; Capacitive sensors; Charge carrier processes; Degradation; Electron mobility; MOSFET circuits; Residual stresses; Silicon; Stress control; Tensile stress; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391547
  • Filename
    1391547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2516494