Use of LPCVD TEOS as a direct bonding material for layer transfer: densified vs. undensified

Author

Ilicali, G. ; Rosner, W. ; Weber, W. ; Boz, S. ; Dreeskornfeld, L. ; Hartwich, J. ; Kretz, J. ; Luyken, J.R. ; Landgraf, E. ; Hofmann, F. ; Risch, L. ; Hansch, W.

Author_Institution

Corp. Res., Infineon Technol. AG, Munich, Germany

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

44

Lastpage

45

Abstract

In this work, LPCVD deposited TEOS, both densified (DT)/undensified (UDT) and structured/non-structured cases are systematically studied and optimized. We have investigated different oxide type bonding materials for layer transfer applications under various processing conditions. It has been shown that very high bond strengths are achievable with UDT for a short-time and low-temperature annealing. Bonding and device related shortcomings or difficulties are proven to be circumvented. Therefore, we propose the use of wafer bonding with UDT for the integration of layer transfer into the fabrication of microelectronic devices.

Keywords

CVD coatings; annealing; chemical mechanical polishing; elemental semiconductors; organic compounds; silicon-on-insulator; thin films; wafer bonding; LPCVD TEOS; Si; annealing; bond strengths; direct bonding material; layer transfer; low-pressure chemical vapor deposition; microelectronic device fabrication; tetraethylorthosilicate; wafer bonding; Annealing; Board of Directors; Fabrication; Plasma temperature; Production; Rough surfaces; Surface roughness; Surface treatment; Temperature distribution; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391548

Filename

1391548