Influence of a Tunneling Gate Current on the noise performance of SOI MOSFETs

In this paper, the RF noise properties of fully depleted (FD) SOI MOSFETs in the presence of a tunneling gate current (TGC) are described using a physical compact noise modeling. A complete noise model is first proposed to account for the presence of TGC. Its influence on the RF noise performance of FD SOI performance is then presented and it is shown that both the minimum noise figure and the optimum noise match conditions are affected in the sub-10 GHz frequency range, for TGC densities higher than 5 A/cm².