• DocumentCode
    2516634
  • Title

    Influence of a Tunneling Gate Current on the noise performance of SOI MOSFETs

  • Author

    Pailloncy, G. ; Iniguez, B. ; Dambrine, G. ; Danneville, F.

  • Author_Institution
    IEMN, CNRS, Villeneuve d´´Ascq, France
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    55
  • Lastpage
    57
  • Abstract
    In this paper, the RF noise properties of fully depleted (FD) SOI MOSFETs in the presence of a tunneling gate current (TGC) are described using a physical compact noise modeling. A complete noise model is first proposed to account for the presence of TGC. Its influence on the RF noise performance of FD SOI performance is then presented and it is shown that both the minimum noise figure and the optimum noise match conditions are affected in the sub-10 GHz frequency range, for TGC densities higher than 5 A/cm2.
  • Keywords
    MOSFET; elemental semiconductors; microwave field effect transistors; semiconductor device models; semiconductor device noise; silicon-on-insulator; tunnelling; 10 GHz; RF noise properties; Si; fully depleted SOI MOSFET; noise figure; noise modeling; tunneling gate current; Circuit noise; FETs; Hydrodynamics; Integrated circuit noise; Leakage current; MOSFETs; Noise figure; Noise measurement; Radio frequency; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391553
  • Filename
    1391553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2516634