Title :
Fabrication of high quality patterned SOI materials by optimized low-dose SIMOX
Author :
Dong, Yemin ; Chen, Meng ; Chen, Jing ; Wang, Xi
Author_Institution :
Shanghai Simgui Technol. Co. Ltd., China
Abstract :
High quality patterned SOI materials fabricated by optimized low-dose and low-energy SIMOX technique are reported. XTEM results reveal that the formed patterned SOI materials have very flat surface and low defect density transition between the bulk and SOI regions. These excellent quality patterned SOI materials are desirable substrates for system-on-a-chip (SOC) applications.
Keywords :
SIMOX; buried layers; dislocation density; elemental semiconductors; system-on-chip; transmission electron microscopy; SOC applications; Si:O2; XTEM analysis; defect density transition; low dose SIMOX method; patterned SOI materials; system-on-chip; Annealing; CMOS technology; Fabrication; Implants; Information technology; Laboratories; Materials science and technology; Performance gain; Silicon; System-on-a-chip;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391555
