Title :
Alternative dielectrics for advanced SOI MOSFETs: thermal properties and short channel effects
Author :
Bresson, N. ; Cristoloveanu, S. ; Oshima, K. ; Mazuré, C. ; Letertre, F. ; Iwai, H.
Author_Institution :
Chemin des Franques, SOITEC S.A., Bernin, France
Abstract :
SOI devices exhibit excellent performance and scalability, but the presence of the buried oxide (BOX) induces self-heating. A possible solution is to replace the SiO2 BOX with other dielectrics that offer improved thermal conductance without degrading the electrical properties. The trade-off between short-channel and thermal effects in advanced SOI MOSFETs (10 nm thick, 20-50 nm long) is examined by comparing various materials: Al2O3, SiC, quartz, diamond and air. Diamond and quartz are excellent candidates for relatively thick BOX whereas alumina and SiC are suitable for ultra-thin BOX. This novel structure can be fabricated by wafer bonding technology.
Keywords :
MOSFET; alumina; buried layers; diamond; dielectric materials; elemental semiconductors; quartz; semiconductor device models; silicon compounds; silicon-on-insulator; thermal conductivity; wafer bonding; 10 nm; 20 to 50 nm; Al2O3; C; SOI MOSFET; SOI devices; Si; SiC; SiO2; air; alumina; buried oxide; diamond; dielectric materials; electrical properties; quartz; self-heating; short channels effects; thermal conductance; thermal effects; thermal properties; ultrathin BOX layer; wafer bonding technology; CMOS technology; Conducting materials; Dielectric materials; Dielectric substrates; High K dielectric materials; MOSFETs; Silicon carbide; Temperature; Thermal conductivity; Thermal degradation;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391556
