Alternative dielectrics for advanced SOI MOSFETs: thermal properties and short channel effects

Author

Bresson, N. ; Cristoloveanu, S. ; Oshima, K. ; Mazuré, C. ; Letertre, F. ; Iwai, H.

Author_Institution

Chemin des Franques, SOITEC S.A., Bernin, France

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

62

Lastpage

64

Abstract

SOI devices exhibit excellent performance and scalability, but the presence of the buried oxide (BOX) induces self-heating. A possible solution is to replace the SiO₂ BOX with other dielectrics that offer improved thermal conductance without degrading the electrical properties. The trade-off between short-channel and thermal effects in advanced SOI MOSFETs (10 nm thick, 20-50 nm long) is examined by comparing various materials: Al₂O₃, SiC, quartz, diamond and air. Diamond and quartz are excellent candidates for relatively thick BOX whereas alumina and SiC are suitable for ultra-thin BOX. This novel structure can be fabricated by wafer bonding technology.

Keywords

MOSFET; alumina; buried layers; diamond; dielectric materials; elemental semiconductors; quartz; semiconductor device models; silicon compounds; silicon-on-insulator; thermal conductivity; wafer bonding; 10 nm; 20 to 50 nm; Al₂O₃; C; SOI MOSFET; SOI devices; Si; SiC; SiO₂; air; alumina; buried oxide; diamond; dielectric materials; electrical properties; quartz; self-heating; short channels effects; thermal conductance; thermal effects; thermal properties; ultrathin BOX layer; wafer bonding technology; CMOS technology; Conducting materials; Dielectric materials; Dielectric substrates; High K dielectric materials; MOSFETs; Silicon carbide; Temperature; Thermal conductivity; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391556

Filename

1391556