Title :
Plasma-activated bonding, controlled cleave process, and non-contact smoothing for Germanium-on-Insulator (GeOI) manufacturing
Author :
Kirk, H.R. ; Lamm, A. ; Paler, A. ; Ong, P.J. ; Malik, I.J. ; Kang, S. ; Henley, F.J.
Author_Institution :
Silicon Genesis Corp., San Jose, CA, USA
Abstract :
Transistor scaling limitations require profound changes in materials systems used to manufacture future generations of integrated circuits. Germanium-on-Insulator (GeOI) substrates have been proposed as one method to overcome the limitations of silicon and silicon on insulator substrates (SOI). GeOI substrates offer the advantages of the high electron and hole mobilities while at least partially overcoming the high leakage currents inherent to the small band gap of germanium. In addition, GeOI has been found to be compatible with high k gate dielectrics, GeOI is now joining silicon-based materials, including SOI, strained silicon (s-Si), strained silicon on SiGe on insulator (SGOI), or strained silicon on insulator s-SOI as potential next-generation engineered substrates.
Keywords :
electron mobility; elemental semiconductors; energy gap; etching; germanium; hole mobility; integrated circuit manufacture; leakage currents; plasma materials processing; semiconductor-insulator boundaries; wafer bonding; Ge; SOI; SiGe on insulator; band gap; controlled cleave process; electron mobility; germanium-on-insulator manufacture; germanium-on-insulator substrates; high k gate dielectrics; hole mobility; integrated circuits; leakage currents; noncontact smoothing process; plasma activated bonding; silicon based materials; silicon on insulator substrates; strained silicon; transistor scaling limitations; Bonding; Charge carrier processes; Dielectric substrates; High K dielectric materials; Integrated circuit manufacture; Manufacturing processes; Plasma materials processing; Process control; Silicon on insulator technology; Smoothing methods;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391557
