DocumentCode
2516770
Title
Charge injection instability
Author
Christen, Thomas
Author_Institution
ABB Corp. Res. Ltd., Baden-Dattwil, Switzerland
fYear
1998
fDate
22-25 Jun 1998
Firstpage
69
Lastpage
72
Abstract
We show that charge injection at a field-enhancing defect in a dielectric free of carriers but with a nonlinear carrier mobility corresponds to an instability of the insulating state. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect. Secondly, the charge slowly redistributes in the bulk. In the present paper we discuss the linear instability of the insulating state for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators
Keywords
carrier mobility; charge injection; dielectric materials; charge injection; critical electric field; defect; dielectric medium; insulating state; linear instability; nonlinear carrier mobility; Boundary conditions; Clouds; Conductivity; Current density; Dielectrics and electrical insulation; Electric fields; Electrodes; Geometry; Permittivity; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
Conference_Location
Vasteras
Print_ISBN
0-7803-4237-2
Type
conf
DOI
10.1109/ICSD.1998.709229
Filename
709229
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