• DocumentCode
    2516770
  • Title

    Charge injection instability

  • Author

    Christen, Thomas

  • Author_Institution
    ABB Corp. Res. Ltd., Baden-Dattwil, Switzerland
  • fYear
    1998
  • fDate
    22-25 Jun 1998
  • Firstpage
    69
  • Lastpage
    72
  • Abstract
    We show that charge injection at a field-enhancing defect in a dielectric free of carriers but with a nonlinear carrier mobility corresponds to an instability of the insulating state. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect. Secondly, the charge slowly redistributes in the bulk. In the present paper we discuss the linear instability of the insulating state for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators
  • Keywords
    carrier mobility; charge injection; dielectric materials; charge injection; critical electric field; defect; dielectric medium; insulating state; linear instability; nonlinear carrier mobility; Boundary conditions; Clouds; Conductivity; Current density; Dielectrics and electrical insulation; Electric fields; Electrodes; Geometry; Permittivity; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
  • Conference_Location
    Vasteras
  • Print_ISBN
    0-7803-4237-2
  • Type

    conf

  • DOI
    10.1109/ICSD.1998.709229
  • Filename
    709229