Title :
Charge injection instability
Author :
Christen, Thomas
Author_Institution :
ABB Corp. Res. Ltd., Baden-Dattwil, Switzerland
Abstract :
We show that charge injection at a field-enhancing defect in a dielectric free of carriers but with a nonlinear carrier mobility corresponds to an instability of the insulating state. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect. Secondly, the charge slowly redistributes in the bulk. In the present paper we discuss the linear instability of the insulating state for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators
Keywords :
carrier mobility; charge injection; dielectric materials; charge injection; critical electric field; defect; dielectric medium; insulating state; linear instability; nonlinear carrier mobility; Boundary conditions; Clouds; Conductivity; Current density; Dielectrics and electrical insulation; Electric fields; Electrodes; Geometry; Permittivity; Stress;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
Conference_Location :
Vasteras
Print_ISBN :
0-7803-4237-2
DOI :
10.1109/ICSD.1998.709229