2D Poisson-Schrodinger simulations in ultra-thin silicon-on-nothing devices: quantum effects impact evaluation

Author

Chanemougame, D. ; Poncet, A. ; Monfray, S. ; Souifi, A. ; Bourdon, H. ; Talbot, A. ; Leverd, F. ; Delille, D. ; Skotnicki, T.

Author_Institution

ST Microelectron., Crolles, France

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

77

Lastpage

78

Abstract

We present results of simulations on silicon-on-nothing (SON) devices featuring ultra-thin Si channels. The simulations are based on QUANTIX, a 2D-Finite Element solver, and consequently fully account for quantization effects. Quantum simulations demonstrate the impact of carriers confinement in very thin Si conduction channel, therefore leading on a substantial threshold voltage increase, up to 350 mV from TSi=10 to 1 nm. Experimental data from SON devices featuring ultra-thin (<2 nm) Si channel and a 50 nm gate length are also used to illustrate this study.

Keywords

MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; finite element analysis; semiconductor device models; silicon; 10 to 1 nm; 2D Poisson-Schrodinger simulations; 2D-finite element solver; 350 mV; 50 nm; MOSFET; QUANTIX simulations; Si; Si conduction channel; carriers confinement; gate length; quantization effects; quantum effects impact evaluation; quantum simulations; threshold voltage; ultra-thin Si channels; ultra-thin silicon-on-nothing device simulation; Carrier confinement; Charge carrier density; Dielectrics; Doping; Potential well; Quantization; Semiconductor thin films; Threshold voltage; Tunneling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391563

Filename

1391563