Title :
Spontaneous polarization of quantum dots
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Germany
Abstract :
We have performed spin density functional theory calculations to determine the electronic structure of lateral GaAs-AlGaAs quantum dots. We have developed a highly efficient, quasi-adiabatic subband method which allows us to solve the Schrodinger equation for dot electron number N/spl lsim/200. We find that the direct Coulomb energy of putting two electrons into up and down spin of the same spatial state at the Fermi surface, combined with the polarization dependent, exchange-correlation induced splitting of the spin levels, typically exceeds the average single particle level spacing and leads to spontaneous spin polarization of the dot.
Keywords :
Fermi surface; III-V semiconductors; Schrodinger equation; aluminium compounds; density functional theory; electron correlations; electron spin polarisation; exchange interactions (electron); gallium arsenide; semiconductor quantum dots; Fermi surface; GaAs-AlGaAs; Schrodinger equation; direct Coulomb energy; electronic structure; exchange-correlation induced splitting; lateral quantum dots; quasi-adiabatic subband method; single particle level spacing; spin density functional theory; spontaneous polarization; Effective mass; Eigenvalues and eigenfunctions; Electrons; Gallium arsenide; Impurities; Polarization; Quantum dots; Quantum mechanics; US Department of Transportation; Voltage fluctuations;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742699