Thermal modeling of silicon-on-insulator current mirrors

Author

Yu, Feixia ; Cheng, Ming-C

Author_Institution

Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

81

Lastpage

83

Abstract

An analytical approach to thermal modeling of SOI circuits is presented, accounting for heat exchanges among devices and heat loss from the Si film, polylines and interconnects through BOX/FOX to the substrate. The approach was applied to SOI current mirrors to study temperature profiles in devices, polylines and interconnects. Electrothermal simulation was also performed, using the developed model and the thermal circuit in BSIMSOI.

Keywords

MOSFET; current mirrors; elemental semiconductors; heat transfer; integrated circuit interconnections; semiconductor device models; semiconductor thin films; silicon; silicon-on-insulator; BSIMSOI; MOSFET; SOI circuits; Si; Si film; buried oxide layer; device temperature profile; electrothermal simulation; filled oxide layer; heat exchange; interconnects; polylines; silicon-on-insulator current mirrors; thermal circuit; thermal model; Analytical models; Circuit simulation; Heat engines; Integrated circuit interconnections; Mirrors; Resistance heating; Silicon on insulator technology; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391565

Filename

1391565