DocumentCode
2516867
Title
Numerical method for the calculation of self-consistent charge densities of reservoir-coupled quantum dots
Author
Scholze, A. ; Schenk, A. ; Fichtner, W.
Author_Institution
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
31
Lastpage
33
Abstract
The calculation of self-consistent charge densities is not a straightforward task in structures with zero-dimensional confinement. In contrast to the semi-classical case the density of states in a quantum dot depends on the potential. However, this dependence is not explicitly given and Newton-Raphson methods are therefore difficult to employ. In this paper we present a numerical method for the calculation of self-consistent electron densities in a quantum dot weakly coupled to a macroscopic reservoir using a multidimensional secant approach that partially overcomes the numerical limitations intrinsic to single-electron transistor device simulations.
Keywords
electronic density of states; semiconductor device models; semiconductor quantum dots; single electron transistors; density of states; device simulation; multidimensional secant approach; reservoir-coupled quantum dots; self-consistent charge densities; single-electron transistor; zero-dimensional confinement; Laboratories; Multidimensional systems; Poisson equations; Potential energy; Quantum dots; Reservoirs; Single electron devices; Single electron transistors; Vectors; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742700
Filename
742700
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