Title :
Numerical method for the calculation of self-consistent charge densities of reservoir-coupled quantum dots
Author :
Scholze, A. ; Schenk, A. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
The calculation of self-consistent charge densities is not a straightforward task in structures with zero-dimensional confinement. In contrast to the semi-classical case the density of states in a quantum dot depends on the potential. However, this dependence is not explicitly given and Newton-Raphson methods are therefore difficult to employ. In this paper we present a numerical method for the calculation of self-consistent electron densities in a quantum dot weakly coupled to a macroscopic reservoir using a multidimensional secant approach that partially overcomes the numerical limitations intrinsic to single-electron transistor device simulations.
Keywords :
electronic density of states; semiconductor device models; semiconductor quantum dots; single electron transistors; density of states; device simulation; multidimensional secant approach; reservoir-coupled quantum dots; self-consistent charge densities; single-electron transistor; zero-dimensional confinement; Laboratories; Multidimensional systems; Poisson equations; Potential energy; Quantum dots; Reservoirs; Single electron devices; Single electron transistors; Vectors; Wave functions;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742700