DocumentCode :
2516889
Title :
Effect of ionized impurity on the sequential tunneling transfer of an electron through a quantum disk
Author :
Ishida, M. ; Yamaguchi, M. ; Sawaki, N.
Author_Institution :
Dept. of Electron., Nagoya Univ., Japan
fYear :
1998
fDate :
19-21 Oct. 1998
Firstpage :
34
Lastpage :
37
Abstract :
The motion of a wavepacket injected into a two dimensional GaAs disk was analysed by solving the time dependent Schrodinger equation with the finite element method. It was found that the presence of an ionized impurity varies the motion of the wavepacket in the disk which results in a modification of the tunneling transfer probability to an electrode connected to the disk. The transfer probability as a function of the position of an impurity is discussed in terms of the probability amplitude of electrons in front of the potential barrier.
Keywords :
III-V semiconductors; Schrodinger equation; finite element analysis; gallium arsenide; semiconductor quantum dots; tunnelling; GaAs; finite element method; ionized impurity; potential barrier; quantum disk; sequential tunneling transfer; time dependent Schrodinger equation; transfer probability; wavepacket motion; Electrodes; Electrons; Gallium arsenide; Impurities; Motion analysis; Numerical models; Quantum dots; Schrodinger equation; Shape; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
Type :
conf
DOI :
10.1109/IWCE.1998.742701
Filename :
742701
Link To Document :
بازگشت