Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in ground plane silicon-on-insulator (GPSOI) cross-talk suppression technology

Author

Stefanou, S. ; Hamel, J.S. ; Baine, P. ; Bain, M. ; Armstrong, B.M. ; Gamble, H.S. ; Kraft, M. ; Kemhadjian, H.A.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

84

Lastpage

85

Abstract

The impact of changing the buried oxide thickness and the ground plane resistivity on the substrate cross-talk in ground plane silicon-on-insulator (GPSOI) cross-talk suppression technology is investigated. It is found that crosstalk increases with increasing oxide thickness for low resistivity ground planes but decreases with increasing oxide thickness for higher ground plane resistivities over certain frequency ranges. An optimum buried oxide thickness is identified.

Keywords

crosstalk; elemental semiconductors; isolation technology; silicon-on-insulator; Si; buried oxide thickness impact; cross-talk suppression technology; ground plane resistivity; ground plane silicon-on-insulator; Computer science; Conductivity; Equivalent circuits; Frequency measurement; Isolation technology; Probes; Silicon on insulator technology; Testing; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391566

Filename

1391566