Title :
DC and RF characterization of fully depleted strained SOI MOSFETs
Author :
Chen, C.L. ; Langdo, T.A. ; Chen, C.K. ; Fiorenza, J.G. ; Wyatt, P.W. ; Currie, M.T. ; Leitz, C.W. ; Braithwaite, G. ; Fritze, M. ; Lambert, R. ; Yost, D.-R. ; Cheng, Z. ; Lochtefeld, A. ; Keast, C.K.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
Abstract :
The RF characteristics of strained SOI (SSOI) MOSFETs are reported for the first time. Fully depleted n- and p-MOSFETs were fabricated on SOI and SSOI wafers. Higher mobility was measured on the SSOI wafers and SSOI n- and p-MOSFETs showed higher transconductance as well as higher fT and fmax than the SOI FETs for the entire gate length range studied. For n-MOSFETs with approximately 180 nm gate length, the best fT and fmax is 75 GHz for SSOI and 60 and 69 GHz, respectively for SOI. The fT for the p-MOSFET with 180-nm gate length is 36 GHz for SSOI and 30 GHz for SOI.
Keywords :
MOSFET; elemental semiconductors; silicon-on-insulator; 180 nm; 30 GHz; 36 GHz; 60 GHz; 69 GHz; 75 GHz; DC properties; RF properties; SSOI wafer mobility; Si; fully depleted strained SOI MOSFET; gate length; n-MOSFET; p-MOSFET; transconductance; CMOS process; Capacitive sensors; FETs; Fabrication; Laboratories; MOSFET circuits; Radio frequency; Silicon on insulator technology; Substrates; Wafer bonding;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391567
