Title :
Electron relaxation in silicon quantum dots by acoustic phonon scattering
Author :
Dur, M. ; Gunther, A.D. ; Vasileska, D. ; Goodnick, S.M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a [100] surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO/sub 2/ interface is modeled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-phonon interaction strongly affects the scattering rate. The calculated transition rate of electrons from the first excited to the ground state shows a strong dependence on spatial confinement and lattice temperature.
Keywords :
electron-phonon interactions; elemental semiconductors; ground states; interface states; inversion layers; potential energy functions; semiconductor quantum dots; semiconductor quantum wells; semiconductor-insulator boundaries; silicon; silicon compounds; (100) surface; Si-SiO/sub 2/; Si/SiO/sub 2/ interface; acoustic phonon scattering; anisotropic electron-phonon interaction; confining potential; electron relaxation; first excited state; fully quantized systems; ground state; lattice temperature; n-type inversion layers; p-type Si; parabolic potential; scattering rate; silicon quantum dots; spatial confinement; transition rate; triangular quantum well; Acoustic scattering; Anisotropic magnetoresistance; Charge carrier processes; Electrons; Lattices; Particle scattering; Phonons; Quantum dots; Silicon; Stationary state;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742704
