Germanium-on-insulator (GeOI) structures realized by the Smart Cut™ technology

Author

Deguet, C. ; Morales, C. ; Dechamp, J. ; Hartmann, J.-M. ; Charvet, A.-M. ; Moriceau, H. ; Chieux, F. ; Beaumont, A. ; Clavelier, L. ; Loup, V. ; Kernevez, N. ; Raskin, G. ; Richtarch, C. ; Allibert, F. ; Letertre, F. ; Mazure, C.

Author_Institution

DRT, CEA, Grenoble, France

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

96

Lastpage

97

Abstract

This paper discusses on the development of germanium-on-insulator (GeOI) structures made by using the smart cut technology, in the preparation of the donor wafer and on the Ge epi development. Thin single crystal layers of Ge [001] have been successfully transferred via oxide to oxide bonding or by Ge to oxide bonding, onto 100 mm and 200 mm Si substrates. The surface roughness of the wafers has been measured by AFM. The surface roughness originating from the splitting step is eliminated by a soft polishing step using a CMP.

Keywords

atomic force microscopy; chemical mechanical polishing; chemical vapour deposition; elemental semiconductors; germanium; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; surface cleaning; surface roughness; wafer bonding; 100 mm; 200 mm; AFM; CMP; Ge; Ge [001] surface; Si substrate; Smart Cut technology; atomic force microscopy; chemical mechanical polishing; donor wafer; germanium-on-insulator structures; oxide bonding; polishing; surface roughness; thin single crystal layers; wafer bonding; Bit error rate; CMOS technology; Chemical vapor deposition; Germanium; Microelectronics; Photovoltaic cells; Production; Silicon; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391571

Filename

1391571