DocumentCode :
2517011
Title :
On the Vth controllability for 4-terminal double-gate MOSFETs
Author :
Masahara, M. ; Liu, Y.X. ; Sakamoto, K. ; Endo, K. ; Ishii, K. ; Matsukawa, T. ; Hosokawa, S. ; Sekigawa, T. ; Tanoue, H. ; Yamauchi, H. ; Kanemaru, S. ; Suzuki, E.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
fYear :
2004
fDate :
4-7 Oct. 2004
Firstpage :
100
Lastpage :
101
Abstract :
We investigate the Vth controllability of the 4-terminal DG-MOSFET (4T-DGFET). We presented a simple and comprehensible model for the 4T-DGFET and made clear the Vth controllability in connection with the initial Vth in the DG-mode. These results discussed here are useful for the 4T-DGFET device and circuit design.
Keywords :
MOSFET; controllability; semiconductor device models; 4-terminal double gate MOSFET device design; circuit design; double gate mode; metal-oxide semiconductor field effect transistors; voltage controllability; Circuits; Controllability; Energy consumption; Explosions; Fabrication; Insulation; MOSFETs; Silicon compounds; Very large scale integration; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
Type :
conf
DOI :
10.1109/SOI.2004.1391573
Filename :
1391573
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2517011
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