Title :
Wafer-level uniaxially strained s-SOI by direct mechanical stress
Author :
Kirk, H.R. ; Malik, I.J. ; Sullivan, Josephine ; Kang, Sook-Yang
Author_Institution :
Silicon Genesis Corp., San Jose, CA, USA
Abstract :
This paper reports a wafer-level uniaxial strain technology for strained SOI (s-SOI) that uses direct mechanical stress and can be additive to local uniaxial strain for further transistor performance improvement. Cylindrical stress bonding of the wafers can generate compressive or tensile uniaxial strain on a thin device silicon film.
Keywords :
MOSFET; elemental semiconductors; internal stresses; semiconductor thin films; silicon; silicon-on-insulator; wafer bonding; Si; compressive uniaxial strain; cylindrical stress bonding; mechanical stress; strained silicon-on-insulator; tensile uniaxial strain; thin device silicon film; transistor performance; wafer bonding; wafer level uniaxially strained s-SOI; Capacitive sensors; Compressive stress; Germanium silicon alloys; MOS devices; Silicon germanium; Substrates; Tensile strain; Tensile stress; Uniaxial strain; Wafer bonding;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391574
