Wafer-level uniaxially strained s-SOI by direct mechanical stress

Author

Kirk, H.R. ; Malik, I.J. ; Sullivan, Josephine ; Kang, Sook-Yang

Author_Institution

Silicon Genesis Corp., San Jose, CA, USA

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

102

Lastpage

103

Abstract

This paper reports a wafer-level uniaxial strain technology for strained SOI (s-SOI) that uses direct mechanical stress and can be additive to local uniaxial strain for further transistor performance improvement. Cylindrical stress bonding of the wafers can generate compressive or tensile uniaxial strain on a thin device silicon film.

Keywords

MOSFET; elemental semiconductors; internal stresses; semiconductor thin films; silicon; silicon-on-insulator; wafer bonding; Si; compressive uniaxial strain; cylindrical stress bonding; mechanical stress; strained silicon-on-insulator; tensile uniaxial strain; thin device silicon film; transistor performance; wafer bonding; wafer level uniaxially strained s-SOI; Capacitive sensors; Compressive stress; Germanium silicon alloys; MOS devices; Silicon germanium; Substrates; Tensile strain; Tensile stress; Uniaxial strain; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391574

Filename

1391574

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517023