• DocumentCode
    2517134
  • Title

    A master equation approach to the simulation of electron transport in small semiconductor devices

  • Author

    Fischetti, M.V.

  • Author_Institution
    Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1998
  • fDate
    19-21 Oct. 1998
  • Firstpage
    80
  • Lastpage
    83
  • Abstract
    The purpose of this paper is to sketch a ´formal´ derivation of the transport equation, emphasizing the crucial approximations required, and to extend the method to more realistic band structures. The example of electron transport in an nin diode is presented.
  • Keywords
    band structure; electrical conductivity; master equation; semiconductor device models; semiconductor diodes; electron transport; master equation; nin diode; realistic band structures; simulation; small semiconductor devices; transport equation; Eigenvalues and eigenfunctions; Electron mobility; Equations; Matrix decomposition; Phonons; Reservoirs; Semiconductor devices; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    0-7803-4369-7
  • Type

    conf

  • DOI
    10.1109/IWCE.1998.742715
  • Filename
    742715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517134