Title :
Integrated dynamic body contact for H-gate PD-SOI MOSFETs for high performance/low power
Author :
Damiano, J. ; Franzon, P.D.
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
Abstract :
This paper discusses on the integrated dynamic body contact for H-gate PD-SOI MOSFETs for high performance/low power. PD-SOI circuit designers often must explicitly account for the MOSFET body voltage. Here, a dynamic body bias is implemented with a compact layout style to achieve improved performance and reduced power consumption.
Keywords :
MOSFET; elemental semiconductors; low-power electronics; power consumption; silicon-on-insulator; H gate partially depleted SOI MOSFET; Si; compact layout; dynamic body bias; integrated dynamic body contact; low power electronics; metal-oxide semiconductor field effect transistors; power consumption; silicon-on-insulator; Circuits; Delay; Energy consumption; Implants; Inverters; MOS devices; MOSFETs; Probes; Ring oscillators; Testing;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391580
