A full-band cellular automaton for charge transport simulation in semiconductors

Author

Saraniti, M. ; Goodnick, S.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA

fYear

1998

fDate

19-21 Oct. 1998

Firstpage

88

Lastpage

91

Abstract

The aim of the present work is to demonstrate a new simulation approach, based on the cellular automaton (CA) method, that includes a full-band representation of the electronic structure and of the phonon spectra, while maintaining the short simulation times typical of the previous nonparabolic CA. Simulation results are shown for charge transport in bulk Si to demonstrate the equivalence of this new approach with full-band EMC simulation results, as well as its efficiency.

Keywords

band structure; cellular automata; electrical conductivity; elemental semiconductors; phonon spectra; semiconductors; silicon; Si; bulk Si; charge transport; charge transport simulation; electronic structure; full-band cellular automaton; full-band representation; phonon spectra; semiconductors; short simulation times; simulation approach; Automata; Computational modeling; Context modeling; Electromagnetic compatibility; Impact ionization; Monte Carlo methods; Particle scattering; Phonons; Polarization; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on

Conference_Location

Osaka, Japan

Print_ISBN

0-7803-4369-7

Type

conf

DOI

10.1109/IWCE.1998.742717

Filename

742717