Title :
Iterative local Monte Carlo technique for the simulation of Si-MOSFETs
Author :
Jakumeit, J. ; Sontowski, T. ; Ravaioli, U.
Author_Institution :
II. Phys. Inst., Koln Univ., Germany
Abstract :
The authors have formulated the mutation operator Monte Carlo method (MOMC) and tested this approach both in the context of evolutionary algorithm optimization and as a stand done transport simulator. They investigate the features of this transport operator in detail, showing that the MOMC is a local Monte Carlo technique which combines features and advantages of the Monte Carlo approach with the stability of iterative algorithms.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; iterative methods; semiconductor device models; silicon; Si; Si-MOSFETs; iterative algorithms; iterative local Monte Carlo technique; mutation operator Monte Carlo method; simulation; stand done transport simulator; transport operator; Computational modeling; Current measurement; Electrons; Evolutionary computation; Genetic mutations; Iterative algorithms; Kinetic theory; Monte Carlo methods; Particle scattering; Testing;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742718
