Title :
Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs
Author :
Watling, J.R. ; Asenov, A. ; Barker, J.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
An analytical geometric model for the valence band in strained and relaxed Si/sub 1-x/Ge/sub x/ is presented, which shows good agreement with a 6-band k/spl middot/p analysis of the valence band. The geometric model allows us to define an effective mass tensor for the warped valence band structure. The model also has applications in the study of III-V semiconductors, and could aid in the interpretation of cyclotron resonance experiments in these bands. A warped three-band Monte Carlo simulation has been developed based on this model making use of the efficient calculation of trajectory dynamics that is made possible through the use of such a model. The calculated transport characteristics show good agreement with the available experimental data.
Keywords :
Ge-Si alloys; MOSFET; Monte Carlo methods; effective mass; electrical conductivity; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; valence bands; III-V semiconductors; Si-GeSi; Si/SiGe MOSFETs; analytical geometric model; cyclotron resonance; effective mass tensor; efficient hole transport model; relaxed Si/sub 1-x/Ge/sub x/; simulation; strained Si/sub 1-x/Ge/sub x/; trajectory dynamics; valence band; warped bands; warped three-band Monte Carlo simulation; warped valence band structure; Analytical models; Computational modeling; Computer simulation; Effective mass; Electronic mail; Germanium silicon alloys; MOSFETs; Monte Carlo methods; Silicon germanium; Solid modeling;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742719
