Title :
New devices using ferroelectric thin films
Author :
Land, C.E. ; Butler, M.A. ; Martin, S.J.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Recent developments in the fabrication technologies of ferroelectric thin films in general and of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) thin films in particular have suggested the feasibility of several devices. Integrated optical devices for information processing and high-speed switching, high-density optical information processing and storage devices, and spatial light modulators are some of the applications currently being investigated for these films. Ongoing studies of the longitudinal electrooptic effects and the photosensitivities of PZT and PLZT thin films have established the feasibility of erasable/rewritable optical memories with fast switching and potentially long lifetimes compared to current magnetooptic thin-film devices. Some properties of PZT thin films and of devices based on those properties are described.<>
Keywords :
electro-optical devices; electro-optical effects; ferroelectric storage; integrated optics; lead compounds; optical disc storage; optical modulation; PLZT thin films; PZT thin films; PbLaZrO3TiO3; PbZrO3TiO3; erasable optical disc; erasable/rewritable optical memories; fabrication technologies; fast switching; ferroelectric thin films; high-density optical information processing; high-speed switching; integrated optical devices; long lifetimes; longitudinal electrooptic effects; photosensitivities; spatial light modulators; storage devices; Ferroelectric materials; High speed optical techniques; Information processing; Lanthanum; Optical device fabrication; Optical devices; Optical films; Optical modulation; Thin film devices; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74272
