DocumentCode :
2517209
Title :
Temperature Transients In Normal And Giant Magneto-resistance Memory Cells
Author :
Pohm, A.V. ; Comstock, C.S. ; Kohl, C.E. ; Ranrnuthu, I. ; Ranmuthu, K.T.M.
Author_Institution :
Nonvolatile Electronics
fYear :
1993
fDate :
22-24 Jun 1993
Firstpage :
5
Lastpage :
7
Keywords :
Anisotropic magnetoresistance; Dielectric materials; Magnetic anisotropy; Magnetic materials; Perpendicular magnetic anisotropy; Sheet materials; Silicon compounds; Steady-state; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonvolatile Memory Technology Review, 1993
Print_ISBN :
0-7803-1290-2
Type :
conf
DOI :
10.1109/NVMT.1993.696936
Filename :
696936
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2517209
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