Title :
Verification of hole scattering rates in Si with quantum yield experiment
Author :
Kamakura, Y. ; Taniguchi, K.
Author_Institution :
Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
Abstract :
High-energy hole scattering rates for a full band Monte Carlo simulation in Si are verified using the quantum yield experiment. We compare two models that yield the correct velocity-field and ionization coefficient characteristics but quite different energy distributions. It is demonstrated that the quantum yield experiment is available as a new monitor of hole scattering rates in Si: the model based on ab initio impact ionization rate shows good agreement with the experiments.
Keywords :
Monte Carlo methods; electrical conductivity; elemental semiconductors; impact ionisation; silicon; Si; ab initio impact ionization rate; energy distributions; full band Monte Carlo simulation; hole scattering rates; ionization coefficient; quantum yield; velocity-field; Acoustic scattering; CMOS technology; Deformable models; Electron mobility; Hot carriers; Impact ionization; Information systems; Optical scattering; Particle scattering; Phonons;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742722
