Demonstration of charge-coupled devices in fully depleted SOI

Author

Sage, J.P. ; Bolkhovsky, V. ; Oliver, W.D. ; Santiago, D.D. ; Weir, T.J.

Author_Institution

Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

130

Lastpage

132

Abstract

This paper discusses on demonstration of charge-coupled devices in fully depleted SOI. CCDs implemented in FDSOI are expected to operate up to higher speeds than conventional bulk surface-channel CCDs. While FDSOI CCDs retain the high linearity and charge storage density of surface-channel CCDs, the buried oxide (BOX) layer allows strong fringing electric fields to penetrate beneath the gates and accelerate the transfer of charge from gate to gate. The simulation results illustrate the speed improvement with increasing BOX thickness. The improvement saturates when the BOX thickness becomes comparable to the gate length.

Keywords

buried layers; charge-coupled devices; elemental semiconductors; semiconductor device models; silicon-on-insulator; BOX thickness; Si; buried oxide layer; charge coupled devices; charge storage density; charge transfer; fringing electric fields; fully depleted SOI; gate length; Charge coupled devices; Circuits; Clocks; Etching; FETs; Laboratories; Linearity; Scanning electron microscopy; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391587

Filename

1391587