DocumentCode
2517327
Title
Terahertz response of MSM photodiodes: Monte Carlo simulation
Author
Ryzhii, M. ; Ryzhii, V. ; Khmyrova, I. ; Willander, M.
Author_Institution
Comput. Solid State Phys. Lab., Aizu Univ., Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
124
Lastpage
126
Abstract
The ultra-high-frequency response of interdigitated metal-semiconductor-metal photodiodes with a GaAs absorbing layer is studied using an ensemble Monte Carlo particle method.
Keywords
Monte Carlo methods; gallium arsenide; metal-semiconductor-metal structures; photodiodes; semiconductor device models; GaAs; GaAs absorbing layer; Monte Carlo simulation; contact spacing; interdigitated MSM photodiodes; ultra-high-frequency response; velocity overshoot; Charge carrier processes; Frequency response; Gallium arsenide; Laboratories; Monte Carlo methods; Optical scattering; Photodiodes; Physics computing; Schottky barriers; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742726
Filename
742726
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