DocumentCode :
2517356
Title :
Bulk inversion in FinFETs and the implied insignificance of the effective gate width
Author :
Kim, S.H. ; Fossum, J.G. ; Trivedi, V.P.
Author_Institution :
Florida Univ., Gainesville, FL, USA
fYear :
2004
fDate :
4-7 Oct. 2004
Firstpage :
145
Lastpage :
147
Abstract :
Three- and two-dimensional numerical simulations of double-gate (DG) and triple-gate (TG) FinFETs having undoped thin bodies have revealed the significance of bulk-inversion current in Ion, as well as Ioff, and the consequent insignificance of the commonly defined effective gate width in comparisons of DG and TG currents.
Keywords :
field effect transistors; semiconductor device models; bulk inversion current; double gate FinFET; effective gate width; three-dimensional numerical simulation; triple gate FinFET; two-dimensional numerical simulation; undoped thin bodies; Analytical models; CMOS technology; Current-voltage characteristics; Economic indicators; Electrodes; FinFETs; Nanoscale devices; Numerical simulation; Radiofrequency interference; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
Type :
conf
DOI :
10.1109/SOI.2004.1391593
Filename :
1391593
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2517356
بازگشت