• DocumentCode
    2517356
  • Title

    Bulk inversion in FinFETs and the implied insignificance of the effective gate width

  • Author

    Kim, S.H. ; Fossum, J.G. ; Trivedi, V.P.

  • Author_Institution
    Florida Univ., Gainesville, FL, USA
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    145
  • Lastpage
    147
  • Abstract
    Three- and two-dimensional numerical simulations of double-gate (DG) and triple-gate (TG) FinFETs having undoped thin bodies have revealed the significance of bulk-inversion current in Ion, as well as Ioff, and the consequent insignificance of the commonly defined effective gate width in comparisons of DG and TG currents.
  • Keywords
    field effect transistors; semiconductor device models; bulk inversion current; double gate FinFET; effective gate width; three-dimensional numerical simulation; triple gate FinFET; two-dimensional numerical simulation; undoped thin bodies; Analytical models; CMOS technology; Current-voltage characteristics; Economic indicators; Electrodes; FinFETs; Nanoscale devices; Numerical simulation; Radiofrequency interference; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391593
  • Filename
    1391593
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517356