DocumentCode
2517389
Title
Numerical studies of transport properties through artificial atoms under magnetic fields
Author
Eto, M.
Author_Institution
Dept. of Phys., Keio Univ., Yokohama, Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
133
Lastpage
136
Abstract
The many-body states in an artificial atom and its transport properties have been examined by numerical studies. The magnetic field dependence of both the ground state and low-lying excited states, obtained by the exact diagonalisation method, is in good agreement with experimental results. We have proposed two possible mechanisms for the anomalous T dependence of conductance peak heights. With increasing magnetic field, the correlation effect becomes stronger, which suppresses the conductance considerably.
Keywords
excited states; galvanomagnetic effects; ground states; semiconductor quantum dots; artificial atoms; conductance; exact diagonalisation; ground state; low-lying excited states; magnetic field dependence; many-body states; Cyclotrons; Electrons; Energy states; Frequency; Magnetic fields; Magnetic properties; Physics; Quantum dots; Stationary state; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742729
Filename
742729
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