• DocumentCode
    2517389
  • Title

    Numerical studies of transport properties through artificial atoms under magnetic fields

  • Author

    Eto, M.

  • Author_Institution
    Dept. of Phys., Keio Univ., Yokohama, Japan
  • fYear
    1998
  • fDate
    19-21 Oct. 1998
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    The many-body states in an artificial atom and its transport properties have been examined by numerical studies. The magnetic field dependence of both the ground state and low-lying excited states, obtained by the exact diagonalisation method, is in good agreement with experimental results. We have proposed two possible mechanisms for the anomalous T dependence of conductance peak heights. With increasing magnetic field, the correlation effect becomes stronger, which suppresses the conductance considerably.
  • Keywords
    excited states; galvanomagnetic effects; ground states; semiconductor quantum dots; artificial atoms; conductance; exact diagonalisation; ground state; low-lying excited states; magnetic field dependence; many-body states; Cyclotrons; Electrons; Energy states; Frequency; Magnetic fields; Magnetic properties; Physics; Quantum dots; Stationary state; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    0-7803-4369-7
  • Type

    conf

  • DOI
    10.1109/IWCE.1998.742729
  • Filename
    742729