DocumentCode
2517400
Title
Unusual floating body effect in fully depleted MOSFETs
Author
Bawedin, M. ; Cristoloveanu, S. ; Flandre, D.
Author_Institution
IMEP, ENSERG, Grenoble, France
fYear
2004
fDate
4-7 Oct. 2004
Firstpage
151
Lastpage
152
Abstract
The transconductance of fully depleted SOI MOSFETs may feature a sudden drop to zero. This surprising behavior, observed for low as well as high drain voltage, exhibits hysteresis, time dependence, and other intriguing properties. The experimental conditions are systematically investigated and a preliminary model is proposed. The new effect is a combination of several mechanisms: floating body, back-gate biasing, transient drain and gate currents, and poly-depletion.
Keywords
MOSFET; elemental semiconductors; semiconductor device models; silicon-on-insulator; Si; back gate biasing; drain voltage; floating body effect; fully depleted SOI MOSFET; hysteresis; intriguing properties; polydepletion; time dependence; transconductance; transient drain currents; transient gate currents; Computer hacking; Hysteresis; Immune system; Impact ionization; MOSFETs; Microelectronics; Shape; Time measurement; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN
0-7803-8497-0
Type
conf
DOI
10.1109/SOI.2004.1391595
Filename
1391595
Link To Document