DocumentCode
2517420
Title
Single-electron tunneling through an asymmetrical tunnel barrier
Author
Amakawa, S. ; Fujishima, M. ; Hoh, K.
Author_Institution
Dept. of Inf. & Commun. Eng., Tokyo Univ., Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
137
Lastpage
140
Abstract
Issues pertaining to single-electron tunneling through an asymmetrical tunnel barrier are discussed. A simple means of incorporating the change in the barrier shape accompanying a tunneling event into calculation of tunnel resistance is proposed. Simulation results show that directionality of tunneling through asymmetrical tunnel barriers is not as strong as reported previously, and that even an unphysical effect could arise if the barrier shape change is neglected.
Keywords
resonant tunnelling; single electron transistors; asymmetrical tunnel barrier; barrier shape; single-electron tunneling; tunnel resistance; Capacitors; Circuit simulation; Electrodes; Electronic switching systems; Electrons; Shape; Surface resistance; Tunneling; US Department of Transportation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742730
Filename
742730
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