Title :
Single-electron tunneling through an asymmetrical tunnel barrier
Author :
Amakawa, S. ; Fujishima, M. ; Hoh, K.
Author_Institution :
Dept. of Inf. & Commun. Eng., Tokyo Univ., Japan
Abstract :
Issues pertaining to single-electron tunneling through an asymmetrical tunnel barrier are discussed. A simple means of incorporating the change in the barrier shape accompanying a tunneling event into calculation of tunnel resistance is proposed. Simulation results show that directionality of tunneling through asymmetrical tunnel barriers is not as strong as reported previously, and that even an unphysical effect could arise if the barrier shape change is neglected.
Keywords :
resonant tunnelling; single electron transistors; asymmetrical tunnel barrier; barrier shape; single-electron tunneling; tunnel resistance; Capacitors; Circuit simulation; Electrodes; Electronic switching systems; Electrons; Shape; Surface resistance; Tunneling; US Department of Transportation; Voltage;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742730
