History-effect-conscious SPICE model extraction for PD-SOI technology

Author

Goo, Jung-Suk ; An, Judy Xilin ; Thuruthiyil, Ciby ; Ly, Tran ; Chen, Qiang ; Radwin, Martin ; Wu, Zhi-Yuan ; Lee, Michael S L ; Zamudio, Luis ; Yonemura, James ; Assad, Farzin ; Pelella, Mario M. ; Icel, Ali B.

Author_Institution

Logic Technol. Dev. Group, Adv. Micro Devices Inc., Sunnyvale, CA, USA

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

156

Lastpage

158

Abstract

This work presents explicit fitting guidelines for AC and DC characteristics, specifically focused on accurate modeling of the history effects in the PD-SOI CMOS circuits. The body potential of the PD-SOI device is primarily determined by the diode current, gate-body current, impact ionization current, junction capacitance, and gate-body capacitance. This paper also discusses artifacts associated with the parasitic currents and highly-resistive thin-body of the PD-SOI.

Keywords

CMOS integrated circuits; MOSFET; SPICE; capacitance; carrier density; elemental semiconductors; semiconductor device models; silicon-on-insulator; AC-DC characteristics; CMOS circuits; SPICE model extraction; Si; complementary metal-oxide-semiconductor circuits; diode current; gate-body capacitance; gate-body current; high resistance thin body; history effects; history-effect-conscious SPICE model; impact ionization current; junction capacitance; parasitic currents; partially depleted SOI technology; silicon-on-insulator; Capacitance; Diodes; Logic devices; MOS devices; MOSFETs; Propagation delay; SPICE; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391597

Filename

1391597