DocumentCode
2517499
Title
Chemical Transfer of in-situ Functionalized Aligned Carbon Nanotube Structures for Microelectronic Packaging Applications
Author
Lin, Wei ; Zhang, Rongwei ; Moon, Kyoung-Sik ; Wong, C.P.
Author_Institution
Sch. of Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2008
fDate
9-12 Dec. 2008
Firstpage
115
Lastpage
120
Abstract
As IC performance increases, many technical challenges appear in the areas of current-carrying capacities, thermal management, I/O density, and thermal-mechanical reliability. To address these problems, the use of aligned carbon nanotubes (CNTs) has been proposed in IC packaging for electrical interconnect and thermal interface materials (TIMs). The theoretically superior electrical, thermal, and mechanical properties of CNTs promise to reduce the interconnect pitch size, increase thermal conductivity, and enhance system reliability, which is expected to bring about revolutionary improvement to microelectronics. However, the problems with the CVD growth process such as high growth temperature and poor adhesion of CNTs to substrates, challenges in selectively patterning CNT structures and high contact resistance of CNT/electrodes become barriers for CNT applications. To circumvent these problems, great efforts have been made to separate the CVD process and the ACNT assembly by various ACNT transfer technology with moderate success. For the popular wet chemical process, pristine CNTs are functionalized in acids and then assembled onto the substrate in a solution. The functionalization process usually truncates the CNTs randomly and introduces high defect density to the lateral walls of the CNTs, which greatly degrades the intrinsic electrical and thermal properties of the 1-D structure of the CNTs. Furthermore, big challenges exist in selective patterning, length control and quality control of functionalized ACNTs. In this study, we proposed the "chemical transfer" method to directly assemble aligned CNTs onto gold-coated substrates.
Keywords
adhesion; carbon nanotubes; contact resistance; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; thermal conductivity; 1-D structure; Au; C; CVD growth process; I/O density; IC packaging; adhesion; carbon nanotube structures; chemical transfer method; contact resistance; electrical interconnect; electrical properties; gold-coated substrates; high growth temperature; in-situ functionalization; interconnect pitch size; length control; mechanical properties; microelectronic packaging; microelectronics; quality control; selective patterning; system reliability; thermal conductivity; thermal interface materials; thermal management; thermal properties; thermal-mechanical reliability; wet chemical process; Assembly; Carbon nanotubes; Chemical vapor deposition; Conducting materials; Integrated circuit packaging; Mechanical factors; Microelectronics; Organic materials; Thermal conductivity; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location
Singapore
Print_ISBN
978-1-4244-2117-6
Electronic_ISBN
978-1-4244-2118-3
Type
conf
DOI
10.1109/EPTC.2008.4763420
Filename
4763420
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