Title :
AC Electrical Characterization of Au/Porous Silicon/p-Si Thin Films
Author :
Chavarria, M.A. ; Fontal, F.
Author_Institution :
Fac. de Ing., Univ. Autonoma de Occidente, Cali, Colombia
Abstract :
The AC electrical characterization of Au/porous silicon/p-Si structures is presented. The Porous Silicon layers were prepared by electrochemical etching in p-type silicon substrates. The AC electrical measurements capacitance - conductance - frequency were performed from 5 Hz to 10 MHz, at room temperature in the DC range of plusmn 2 V. We studied two structures types; first a conductor type Au/PS/Au and second diode type Au/PS/p-Si/Al. We have obtained the parameter fitting values according an electrical model circuit in AC corresponding to the sample fabricated. In the electrical characterization the low frequency phenomenon, the geometric capacitance and the depletion capacitances presented in the structures were determined.
Keywords :
electrochemistry; elemental semiconductors; etching; gold; porous semiconductors; semiconductor thin films; semiconductor-metal boundaries; silicon; AC electrical characterization; Au-Si-Al; Si; capacitance -conductance-frequency measurement; electrical model circuit; electrochemical etching; frequency 5 Hz to 10 MHz; p-type silicon substrates; parameter fitting value; porous silicon; porous silicon layers; temperature 293 K to 298 K; thin films; voltage -2 V to 2 V; Capacitance measurement; Conductors; Electric variables measurement; Etching; Frequency measurement; Gold; Performance evaluation; Semiconductor thin films; Silicon; Temperature distribution; Electrical conductivity; Electrical model circuit; Metal Semiconductors structure; Porous Silicon;
Conference_Titel :
Electronics, Robotics and Automotive Mechanics Conference, 2009. CERMA '09.
Conference_Location :
Cuernavaca, Morelos
Print_ISBN :
978-0-7695-3799-3
DOI :
10.1109/CERMA.2009.15