Title :
Simulation of dynamic particle trajectories through resonant-tunneling structures based upon Wigner distribution function
Author :
Tsuchiya, H. ; Miyoshi, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
The dynamic particle trajectories of a resonant-tunneling structure at large bias conditions are investigated based upon the phase space description in the Wigner distribution function. The procedure for the Wigner trajectory calculation is presented in detail. We demonstrate the dynamic behaviors of the quantum tunneling trajectories and the steady-state tunneling times, corresponding with the transmission coefficient spectra and the classical particle trajectories. The Wigner trajectory technique presented in this paper can provide an instructive description of carrier nonequilibrium quantum transport distinct from the conventional carrier statistics such as carrier density and current density distributions. Thus, it will be available to understand the dynamic behaviors of various nanostructure devices.
Keywords :
III-V semiconductors; Wigner distribution; aluminium compounds; gallium arsenide; resonant tunnelling diodes; semiconductor device models; GaAs-AlGaAs; Wigner distribution function; Wigner trajectory calculation; carrier nonequilibrium quantum transport; dynamic particle trajectories; nanostructure devices; phase space description; resonant-tunneling structures; steady-state tunneling times; transmission coefficient spectra; Boltzmann equation; Distributed computing; Distribution functions; Flowcharts; Magnetic fields; Particle scattering; Potential energy; Quantum computing; Resonant tunneling devices; Solids;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742735