DocumentCode :
2517539
Title :
Analysis of phase breaking effect in triple-barrier resonant-tunneling diodes
Author :
Machida, N. ; Furuya, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fYear :
1998
fDate :
19-21 Oct. 1998
Firstpage :
160
Lastpage :
162
Abstract :
We have applied nonequilibrium Green´s function (NEGF) formalism to triple barrier resonant tunneling diodes (TBRTD) structures for the first time in order to reproduce more realistic J-V curves measured experimentally than those derived by the conventional method. It is shown that the peak current density derived by NEGF can be the same order of magnitude measured experimentally and we can perform an improved estimation for the coherence of hot electrons by using NEGF formalism compared to results from the conventional method.
Keywords :
Green´s function methods; current density; hot carriers; resonant tunnelling diodes; semiconductor device models; J-V curves; current density; hot electrons; nonequilibrium Green´s function; phase breaking; triple-barrier resonant-tunneling diodes; Coherence; Distribution functions; Electrodes; Electrons; Equations; Lattices; Light emitting diodes; Particle scattering; Resonance; Resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
Type :
conf
DOI :
10.1109/IWCE.1998.742736
Filename :
742736
Link To Document :
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