DocumentCode
2517539
Title
Analysis of phase breaking effect in triple-barrier resonant-tunneling diodes
Author
Machida, N. ; Furuya, K.
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
160
Lastpage
162
Abstract
We have applied nonequilibrium Green´s function (NEGF) formalism to triple barrier resonant tunneling diodes (TBRTD) structures for the first time in order to reproduce more realistic J-V curves measured experimentally than those derived by the conventional method. It is shown that the peak current density derived by NEGF can be the same order of magnitude measured experimentally and we can perform an improved estimation for the coherence of hot electrons by using NEGF formalism compared to results from the conventional method.
Keywords
Green´s function methods; current density; hot carriers; resonant tunnelling diodes; semiconductor device models; J-V curves; current density; hot electrons; nonequilibrium Green´s function; phase breaking; triple-barrier resonant-tunneling diodes; Coherence; Distribution functions; Electrodes; Electrons; Equations; Lattices; Light emitting diodes; Particle scattering; Resonance; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742736
Filename
742736
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