DocumentCode :
2517575
Title :
A very low on-resistance SOI BiCDMOS LSI for automotive actuator control
Author :
Hattori, Masayuki ; Ito, Fumihiko ; Kako, Masahiro
Author_Institution :
Dept. of IC Design, Toyota Motor Corp., Japan
fYear :
2004
fDate :
4-7 Oct. 2004
Firstpage :
171
Lastpage :
173
Abstract :
An actuator control SOI BiCDMOS LSI for automotive applications has been designed using trench-isolation process technologies. This LSI includes the very low on-resistance output circuits, bipolar circuits and the analog and digital CMOS. Using the trench-isolation technology, the very small chip size and high temperature capability can be achieved. This LSI can simplify automotive actuator control circuits and allow high precision automotive control.
Keywords :
BiCMOS integrated circuits; actuators; automotive electronics; elemental semiconductors; isolation technology; large scale integration; silicon-on-insulator; SOI BiCDMOS LSI; Si; analog CMOS; automotive actuator control; bipolar circuits; chip size; digital CMOS; large scale integration; output circuits; precision automotive control; silicon-on-insulator; trench-isolation technology; Actuators; Automotive electronics; Automotive engineering; CMOS process; Diesel engines; Driver circuits; Large scale integration; MOS devices; Temperature; Valves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
Type :
conf
DOI :
10.1109/SOI.2004.1391603
Filename :
1391603
Link To Document :
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