Title :
Characteristics of Thermal Resistance for High Power LEDs
Author :
Kuo, Sheng-Liang ; Liu, Chun-Kai ; Dai, Ming-Ji ; Yu, Chih-Kuang ; Chien, Heng-Chieh ; Hsu, Chung-Yen
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Taiwan
Abstract :
In this paper the accurate and fast measurement equipment was developed and applied to study the thermal characteristics of high power LEDs. The forward-voltage based method was conducted to measure the junction temperature of high power LEDs. Conduction type method is adopted to measure the temperature sensitivity parameter (TSP) with small magnitude of error compared with the traditional method. The experiment time was reduced from 3~4 hours to 10 minutes for one sample. It was demonstrated that the repeatability of the measurement system was well after the repeatability test. LEDs used here were 5 W single chip LED and 50 W multi-chip LED with 36 chips inside the LED. Thermal resistance of junction-to-case as function of input power and case temperature was discussed. It was shown that the 5 W LED revealed an increasing trend of thermal resistance with the input power at each case temperature but the contrary trend of 5OW LED. The results also exhibited the dependency of thermal resistance and case temperature. With the increasing case temperature, the value of thermal resistance became higher under each input power. Three factors affected the thermal performance including: the first, the relation between light output efficiency and junction temperature; the second, the effect of internal series electrical resistance Rin and external electrical resistance Rex; and the third, the materials degeneration of each part inside the LEDs package as the junction temperature increased. To combine the three factors could explain the thermal characteristics of high power LEDs.
Keywords :
electric resistance; light emitting diodes; thermal resistance measurement; external electrical resistance; forward-voltage based method; high power LEDs; high power light-emitting diodes; internal series electrical resistance; junction temperature; light output efficiency; power 5 W; power 50 W; temperature sensitivity parameter; thermal resistance; time 10 min; time 3 hour to 4 hour; Electric resistance; Electrical resistance measurement; Light emitting diodes; Power measurement; Semiconductor device measurement; System testing; Temperature measurement; Temperature sensors; Thermal factors; Thermal resistance;
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
DOI :
10.1109/EPTC.2008.4763426