• DocumentCode
    2517605
  • Title

    Three dimensional multi-grid Poisson solver

  • Author

    Wigger, S.J. ; Saraniti, M. ; Goodnick, S.M.

  • Author_Institution
    Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    1998
  • fDate
    19-21 Oct. 1998
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    The Newton multigrid method was shown to be an effective method for solving the nonlinear Poisson equation for semiconductor devices under thermal equilibrium conditions. This technique can also be used to solve problems involving reverse bias junctions. Assuming an insignificant concentration of minority carriers, such that no leakage current is present, and fixing the quasi-Fermi potential as a constant for majority carriers, the nonlinear Poisson equation can be used to simulate such situations.
  • Keywords
    Poisson equation; differential equations; semiconductor device models; 3D multi-grid Poisson solver; Newton multigrid method; nonlinear Poisson equation; quasi-Fermi potential; reverse bias junctions; semiconductor devices; thermal equilibrium; Analytical models; Computational modeling; EPROM; Educational institutions; Geometry; Laplace equations; Nonlinear equations; Nonvolatile memory; Poisson equations; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    0-7803-4369-7
  • Type

    conf

  • DOI
    10.1109/IWCE.1998.742739
  • Filename
    742739