DocumentCode
2517605
Title
Three dimensional multi-grid Poisson solver
Author
Wigger, S.J. ; Saraniti, M. ; Goodnick, S.M.
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
170
Lastpage
173
Abstract
The Newton multigrid method was shown to be an effective method for solving the nonlinear Poisson equation for semiconductor devices under thermal equilibrium conditions. This technique can also be used to solve problems involving reverse bias junctions. Assuming an insignificant concentration of minority carriers, such that no leakage current is present, and fixing the quasi-Fermi potential as a constant for majority carriers, the nonlinear Poisson equation can be used to simulate such situations.
Keywords
Poisson equation; differential equations; semiconductor device models; 3D multi-grid Poisson solver; Newton multigrid method; nonlinear Poisson equation; quasi-Fermi potential; reverse bias junctions; semiconductor devices; thermal equilibrium; Analytical models; Computational modeling; EPROM; Educational institutions; Geometry; Laplace equations; Nonlinear equations; Nonvolatile memory; Poisson equations; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742739
Filename
742739
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