DocumentCode :
2517605
Title :
Three dimensional multi-grid Poisson solver
Author :
Wigger, S.J. ; Saraniti, M. ; Goodnick, S.M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
1998
fDate :
19-21 Oct. 1998
Firstpage :
170
Lastpage :
173
Abstract :
The Newton multigrid method was shown to be an effective method for solving the nonlinear Poisson equation for semiconductor devices under thermal equilibrium conditions. This technique can also be used to solve problems involving reverse bias junctions. Assuming an insignificant concentration of minority carriers, such that no leakage current is present, and fixing the quasi-Fermi potential as a constant for majority carriers, the nonlinear Poisson equation can be used to simulate such situations.
Keywords :
Poisson equation; differential equations; semiconductor device models; 3D multi-grid Poisson solver; Newton multigrid method; nonlinear Poisson equation; quasi-Fermi potential; reverse bias junctions; semiconductor devices; thermal equilibrium; Analytical models; Computational modeling; EPROM; Educational institutions; Geometry; Laplace equations; Nonlinear equations; Nonvolatile memory; Poisson equations; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
Type :
conf
DOI :
10.1109/IWCE.1998.742739
Filename :
742739
Link To Document :
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