High-temperature, low-power 8-MegΩ by 1.2-MegHz SOI-CMOS transimpedance amplifier for MEMS-based wireless sensors

Author

Toygur, L. ; Yu, X. ; Garverick, S.

Author_Institution

Case Western Reserve Univ., Cleveland, OH, USA

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

179

Lastpage

181

Abstract

This paper reports a high-temperature, wide-gain-bandwidth SOI-CMOS transimpedance amplifier that is well suited for application to MEMS-based impedance sensors and oscillators. The amplifier was fabricated using a fully depleted 0.5-μm technology and achieves a gain-bandwidth of 8 MegΩ by 1.2 MegHz at room temperature, drawing just 0.66 mW from a 3.3-V power supply. Gain and bandwidth remain above 2 MegΩ and 0.3 MegHz, respectively, at all temperatures up to 300°C, while power consumption remained under 1 mW. Die area is just 8500 μm².

Keywords

CMOS integrated circuits; elemental semiconductors; feedback amplifiers; low-power electronics; microsensors; oscillators; power consumption; silicon-on-insulator; temperature sensors; 0.5 micron; 0.66 mW; 1.2 MHz; 293 to 298 K; 3.3 V; 300 degC; MEMS based impedance sensors; MEMS based wireless sensors; SOI CMOS transimpedance amplifier; Si; fully depleted 0.5 μm technology; low-power electronics; oscillators; power consumption; power supply; room temperature; wide gain bandwidth; Bandwidth; Frequency shift keying; Impedance; Micromechanical devices; Radiofrequency amplifiers; Temperature sensors; Transconductance; Voltage; Voltage-controlled oscillators; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391606

Filename

1391606