Title :
A domain decomposition method: a simulation study
Author :
Cercignani, C. ; Gamba, I.M. ; Jerome, J.W. ; Chi-Wang Shu
Author_Institution :
Politecnico di Milano, Italy
Abstract :
In previous work (1998), the authors introduced a conceptual domain decomposition approach, combining drift-diffusion, kinetic, and high-field regimes. In this paper, we continue the program. We again define a global calibrator, a linear approximation to the Boltzmann transport equation, and solve this in one space and one velocity dimension. Second, we implement a global domain decomposition method, by systematic sampling of separation points between drift-diffusion and high field regimes. The interdomain boundary conditions are implemented through the stencil overlap of the algorithms in both regions.
Keywords :
carrier mobility; high field effects; semiconductor device models; Boltzmann transport equation; domain decomposition; drift-diffusion regime; global calibrator; high-field regime; interdomain boundary conditions; kinetic regime; Boundary conditions; Doping; Extrapolation; Gallium arsenide; Hafnium; Kinetic theory; Linear approximation; Maxwell equations; Sampling methods; Semiconductor process modeling;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742740