• DocumentCode
    2517633
  • Title

    A domain decomposition method: a simulation study

  • Author

    Cercignani, C. ; Gamba, I.M. ; Jerome, J.W. ; Chi-Wang Shu

  • Author_Institution
    Politecnico di Milano, Italy
  • fYear
    1998
  • fDate
    19-21 Oct. 1998
  • Firstpage
    174
  • Lastpage
    177
  • Abstract
    In previous work (1998), the authors introduced a conceptual domain decomposition approach, combining drift-diffusion, kinetic, and high-field regimes. In this paper, we continue the program. We again define a global calibrator, a linear approximation to the Boltzmann transport equation, and solve this in one space and one velocity dimension. Second, we implement a global domain decomposition method, by systematic sampling of separation points between drift-diffusion and high field regimes. The interdomain boundary conditions are implemented through the stencil overlap of the algorithms in both regions.
  • Keywords
    carrier mobility; high field effects; semiconductor device models; Boltzmann transport equation; domain decomposition; drift-diffusion regime; global calibrator; high-field regime; interdomain boundary conditions; kinetic regime; Boundary conditions; Doping; Extrapolation; Gallium arsenide; Hafnium; Kinetic theory; Linear approximation; Maxwell equations; Sampling methods; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    0-7803-4369-7
  • Type

    conf

  • DOI
    10.1109/IWCE.1998.742740
  • Filename
    742740