Title :
Experimental gate misalignment analysis on double gate SOI MOSFETs
Author :
Widiez, J. ; Daugé, F. ; Vinet, M. ; Poiroux, T. ; Previtali, B. ; Mouis, M. ; Deleonibus, S.
Abstract :
This paper reports for the first time an experimental analysis of gate misalignment influence on DG planar nMOSFETs performance and SCE, compared to simulations. In addition, gate coupling is demonstrated to be a sensitive parameter to evaluate the real on-wafer alignment.
Keywords :
MOSFET; elemental semiconductors; silicon-on-insulator; DG planar nMOSFETs; Si; double gate SOI MOSFET; gate coupling; gate misalignment analysis; on wafer alignment; planar MOSFET; Analytical models; CMOS technology; Chemicals; Dry etching; Fabrication; MOSFETs; Performance analysis; Testing; Tin; Wafer bonding;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391609
