Title :
Strain engineered In/sub x/Ga/sub 1-x/As channel pHEMTs on virtual substrates: a simulation study
Author :
Babiker, S. ; Asenov, A. ; Roy, S. ; Barker, J.R. ; Beaumont, S.P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
The impact of In/sub x/Al/sub 1-x/As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively strained channel devices. It is argued that strain engineering in GaAs based devices makes it possible to realise RF characteristics comparable to InP based pHEMTs while obtaining improved breakdown characteristics.
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; In content; InGaAs-InAlAs; RF characteristics; breakdown characteristics; channel pHEMTs; strain control buffers; strain engineering; tensile strained channel devices; virtual substrates; Capacitive sensors; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; PHEMTs; Radio frequency; Strain control;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742741
