DocumentCode :
2517665
Title :
Radiation hardness and application of CCDs as particle detectors
Author :
Sopczak, André
Author_Institution :
Lancaster Univ., Lancaster, UK
fYear :
2010
fDate :
26-28 April 2010
Firstpage :
1056
Lastpage :
1061
Abstract :
The Nobel Prize-winning invention of an imaging semiconductor circuit (the CCD sensor) has important applications for particle physics detectors. The Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. Prototypes with 50 MHz readout in column-parallel technique have been developed in recent years and extensively tested. For the application of CCDs as vertex detectors in high-radiation environments of future particle colliders, the study of their radiation hardness is crucial for these applications.
Keywords :
CCD image sensors; position sensitive particle detectors; CCD sensor; charge coupled devices; column-parallel technique; frequency 50 MHz; imaging semiconductor circuit; particle colliders; particle detectors; particle physics detectors; radiation hardness; Analytical models; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Frequency; Prototypes; Radiation detectors; Semiconductor radiation detectors; Tail; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference
Conference_Location :
Valletta
Print_ISBN :
978-1-4244-5793-9
Type :
conf
DOI :
10.1109/MELCON.2010.5475896
Filename :
5475896
Link To Document :
بازگشت