• DocumentCode
    2517665
  • Title

    Radiation hardness and application of CCDs as particle detectors

  • Author

    Sopczak, André

  • Author_Institution
    Lancaster Univ., Lancaster, UK
  • fYear
    2010
  • fDate
    26-28 April 2010
  • Firstpage
    1056
  • Lastpage
    1061
  • Abstract
    The Nobel Prize-winning invention of an imaging semiconductor circuit (the CCD sensor) has important applications for particle physics detectors. The Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. Prototypes with 50 MHz readout in column-parallel technique have been developed in recent years and extensively tested. For the application of CCDs as vertex detectors in high-radiation environments of future particle colliders, the study of their radiation hardness is crucial for these applications.
  • Keywords
    CCD image sensors; position sensitive particle detectors; CCD sensor; charge coupled devices; column-parallel technique; frequency 50 MHz; imaging semiconductor circuit; particle colliders; particle detectors; particle physics detectors; radiation hardness; Analytical models; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Frequency; Prototypes; Radiation detectors; Semiconductor radiation detectors; Tail; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference
  • Conference_Location
    Valletta
  • Print_ISBN
    978-1-4244-5793-9
  • Type

    conf

  • DOI
    10.1109/MELCON.2010.5475896
  • Filename
    5475896