DocumentCode
2517665
Title
Radiation hardness and application of CCDs as particle detectors
Author
Sopczak, André
Author_Institution
Lancaster Univ., Lancaster, UK
fYear
2010
fDate
26-28 April 2010
Firstpage
1056
Lastpage
1061
Abstract
The Nobel Prize-winning invention of an imaging semiconductor circuit (the CCD sensor) has important applications for particle physics detectors. The Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. Prototypes with 50 MHz readout in column-parallel technique have been developed in recent years and extensively tested. For the application of CCDs as vertex detectors in high-radiation environments of future particle colliders, the study of their radiation hardness is crucial for these applications.
Keywords
CCD image sensors; position sensitive particle detectors; CCD sensor; charge coupled devices; column-parallel technique; frequency 50 MHz; imaging semiconductor circuit; particle colliders; particle detectors; particle physics detectors; radiation hardness; Analytical models; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Frequency; Prototypes; Radiation detectors; Semiconductor radiation detectors; Tail; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference
Conference_Location
Valletta
Print_ISBN
978-1-4244-5793-9
Type
conf
DOI
10.1109/MELCON.2010.5475896
Filename
5475896
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