Author :
Mathew, L. ; Du, Yang ; Thean, A.V.-Y. ; Sadd, M. ; Vandooren, M. Sadd A ; Parker, C. ; Stephens, T. ; Mora, R. ; Rai, R. ; Zavala, M. ; Sing, D. ; Kalpat, S. ; Hughes, J. ; Shimer, R. ; Jallepalli, S. ; Workman, G. ; Zhang, W. ; Fossum, J.G. ; White, B.E
Author_Institution :
APRDL Freescale Semicond. Inc., Austin, TX, USA
Abstract :
Perfectly self aligned vertical multiple independent gate field effect transistor (MIGFET) CMOS devices have been fabricated. The unique process used to fabricate these devices allow them to be integrated with FinFET devices. Device and circuit simulations have been used to explain the device and explore new applications using this device. A novel application of the MIGFET as a signal mixer has been demonstrated. The undoped channel, very thin body, perfectly matched gates allows charge coupling of the two signals and provide a new family of applications using the MIGFET mixer. Since the process allows integration of regular CMOS double gate devices and MIGFET devices this technology has potential for various digital and analog mixed-signal applications.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; mixers (circuits); semiconductor device models; CMOS double gate device integration; CMOS vertical multiple independent gate field effect transistor mixer; FET device simulation; FinFET devices; charge coupling; circuit simulation; digital-analog mixed signal application; signal mixer; undoped channel; Circuit simulation; Copper; Current measurement; Degradation; FETs; FinFETs; Implants; MOS devices; MOSFETs; Silicon;
